Carbon nanotubes were separately synthesized by a new pulsed laser ablation (PLA) for in-situ growth method and CVD support method in this paper.
為了探索制備碳納米管的新方法及其制備工藝，本文分別嘗試采用了新的脈沖激光轟擊原位生長法和CVD基體法兩種方法來制備碳納米管。
The effects of adding fluorine, chlorine, phosphorus and oxygen in C - H systems and the effects of adding oxygen, fluorine in C - S systems on the chemical transport reaction in the production of carbon nanotube (CNT) via chemical vapor deposition(CVD) have been calculated by using software developed by scientists at Russian Academy of Science.
利用俄羅斯科學院研制的軟件計算分析了CVD法制備碳納米管過程中在碳氫體系添加氟、氯、磷、氧等元素及在碳硫體系中加入氧、氟等元素對于化學傳遞反應的影響,結果表明,這些元素的加入有利于傳遞反應的進行。
Influences on the percentage of deposited carbon from hydrocarbon via chemical vapor deposition at 700 K to (1 500 K,)101×10~3 Pa and CO via chemical vapor deposition at 700 K to (1 200 K),101×10~3 Pa were calculated by use of the CVD (chemical vapor deposition) software developed by the scientists of Russia Academy of Science.
利用俄羅斯科學院研制的CVD(chemicalvapordeposition)軟件計算了在101×103Pa和700K～1500K烴催化熱解以及在101×103Pa和700K～1200KCO催化熱解影響碳沉積率的因素,并根據(jù)碳沉積相邊界點的反應物組成繪制了碳沉積邊界曲線,預測了碳沉積區(qū),計算結果對多壁碳納米管的制備提供了有關的信息。
With TiCl4+O2 reaction system, nano-TiO2 powders were prepared by radio frequency plasma chemical vapor deposition (RF-PCVD).
采用高頻等離子體化學氣相沉積法(RF-PCVD)法,以TiCl4 + O2為反應體系,制備出了納米級的TiO2粉體。
In this thesis,GeSi films were grown on glass substrates by PECVD.
采用等離子體CVD法在玻璃襯底上沉積 Ge Si薄膜 ,研究了不同生長條件下的樣品的光學特性 ,從樣品的紫外 -可見光反射譜和透射譜計算出光學帶隙 ,發(fā)現(xiàn)隨著 Ge含量的增加 ,薄膜的光學帶隙減小。
Study on Synthesis of Carbon Nanotubes by Pulsed Laser Ablation for In-Situ Growth Method and CVD Supporting Method;
脈沖激光轟擊原位生長法和CVD基體法制備碳納米管研究
The pretreatment methods of cemented carbide substrate and their effects on CVD diamond film were mainly summarized.
本文重點對近年硬質合金基體表面預處理方法及其對CVD金剛石膜沉積的影響進行了綜述。
Preparation and Characteristic of Carbon Related Wide Bandgap Semiconductor Materials Prepared by Chemical Vapor Deposition;
CVD制備碳基寬帶隙半導體材料及其特性研究
Synthesis and Growth Mechanism of Carbon Nanotubes on Different Substrates Through CVD Method;
CVD法在不同基底上制備碳納米管及其機制研究
Microstructure and Properties of a-Si_(1-x)C_x:H Thin Films Prepared by PECVDs;
等離子體CVD法制備a-Si_（1-x）C_x：H薄膜及其微結構和性能研究
Effect of Dilute Gas on Performance of CVD-SiC Fibers
稀釋氣體對CVD-SiC纖維性能的影響
Effect of Gas Flow and Gas Ratio on CVD SiC Coating
氣體流量及配比對CVD SiC膜層的影響
The Fabrication of Continuous High Performance SiC Fiber by Chemical Vapor Deposition;
CVD法制備高性能SiC連續(xù)纖維技術
Computer Control System of Producing Carbon Nanotubes with CVD;
CVD法制備納米碳管的計算機控制系統(tǒng)
Simulation of Growth Process of Titania Nanoparticles Synthesized by Flame CVD Process;
火焰CVD法制備TiO_2納米顆粒的數(shù)值模擬
The Study of the Coating of Silicon Dioxide by CVD Utilizing TEOS-O_3;
CVD法采用TEOS-O_3沉積二氧化硅膜
Synthesis and Characterization of Aligned Carbon Nanotubes Prepared by CVD;
CVD法制備定向納米碳管及其表征
Technical Study on Deposition of B-C Films by MWECR CVD Method;
MWECR CVD法制備B-C薄膜的工藝研究
Preparations and Characteration of single phosphorus-doped p-type ZnO nanowire
CVD法制備單根磷摻雜P型ZnO納米線
The Analysis of CVD Process for High Purity Titanium
CVD法制備高純鈦形核過程動力學分析
Synthesis of multiwall carbon nanotubes by decomposition of methane over vanadium container catalysts
用含釩催化劑CVD法制備多壁納米碳管
Fundamental Study on High-efficiency Polishing for CVD Diamond Thick Film;
CVD金剛石厚膜高效拋光的基礎研究
Simulation on the Temperature and Pressure Field of CVD Diamond Blunt Aircraft under Flight;
CVD金剛石膜鈍頭體飛行溫度與壓力的仿真研究