The quality of SOI wafer mainly depends on the structure of Top-Si as well as BOX(Buried Oxide).
SOI晶圓材料正在成為制備IC芯片的主要原材料。
Study of the Single-Event Effect of SOI NMOSFET by 3-D Simulation;
SOI NMOSFET單粒子效應(yīng)的3-D模擬
The Design of Three-Axis Accelerometer Based on SOI;
基于SOI的三軸壓阻微加速度計(jì)的設(shè)計(jì)
Simulation experiment of tolerance of irradiation about domestic SOI 1750A microprocessor;
國(guó)產(chǎn)SOI 1750A微處理器抗輻射效應(yīng)模擬試驗(yàn)
An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.
采用線(xiàn)錐形結(jié)構(gòu) ,在 silicon- on- insulator(SOI)材料上設(shè)計(jì)并實(shí)現(xiàn)了一種新的緊縮型 3- d B多模干涉耦合器(MMI) 。
A 4×4 area modulation silicon on insulator (SOI) multimode interference coupler optical switch, composed of four cascaded 2×2 area modulation optical switches, has been designed.
根據(jù)區(qū)域調(diào)制多模干涉耦合器光開(kāi)關(guān)的工作原理 ,以 2× 2區(qū)域調(diào)制多模干涉光開(kāi)關(guān)為基礎(chǔ) ,采用級(jí)聯(lián)的方式設(shè)計(jì)了 4× 4區(qū)域調(diào)制多模干涉SOI光波導(dǎo)開(kāi)關(guān)。
Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect.
絕緣體上生長(zhǎng)的薄單晶硅膜 (SOI)具有良好的橫向絕緣、抗輻照、無(wú)鎖存效應(yīng)和無(wú)寄生電容 ,并能有效地提高硅集成電路的速度和集成度 ,在深亞微米 VL SI技術(shù)中 ,具有很大的優(yōu)勢(shì)和潛力。
Evolution of Wafer-Surface Preparation for Semiconductor Industry;
半導(dǎo)體產(chǎn)業(yè)中晶圓片表面處理的發(fā)展
The structural design of the wafer expansion device was put forward.
該裝置可完成片盒、內(nèi)圈和外圈的輸入和取片動(dòng)作,實(shí)現(xiàn)擴(kuò)晶過(guò)程張緊力的調(diào)節(jié)控制、分離晶圓和襯架、排出空片盒和廢棄的襯架等。
We present a FEM method for forecasting the suitable pressure on the retaining ring,which is critical in manufacturing good quality wafers.
隨著晶圓直徑的增加,在CMP加工過(guò)程中,晶圓邊緣容易出現(xiàn)"過(guò)磨(over-grinding)"現(xiàn)象,降低了平坦度和晶圓利用率。
According to the characteristics,the modeling problem using Petri net for cluster tools in wafer fabrication was studied.
晶圓加工過(guò)程中使用的模塊化組合設(shè)備具有可重構(gòu)性,設(shè)備配置的復(fù)雜程度由晶圓加工工藝方案決定,針對(duì)這一特點(diǎn),研究了晶圓加工系統(tǒng)的Petri網(wǎng)建模問(wèn)題。