Study of temperature properties of the SiC CMOS inverter;
碳化硅CMOS倒相器溫度特性
In this paper,thinking of the existence of leakage current,we make out a simple analytical model of CMOS inverter s input and output feature in wide temperature range We find out the main factors that limit the high temperature performance of CMOS circuits Finally,this model is testified by the experiments result
在考慮了器件高溫泄漏電流的前提下 ,建立了寬溫區(qū)CMOS倒相器的傳輸特性模型 ,明確了制約CMOS電路高溫性能的主要因素以及設計的關鍵之處 最后 ,用實驗檢驗了該模型的合理
An improved analytical model is developed to predict the propagation delay of a small size CMOS inverter, which includes the effect of the velocity saturation and the influence of input waveform slope.
提出了一個新的小尺寸 CMOS倒相器延遲模型 ,它考慮了速度飽和效應以及非階梯的輸入信號對延遲的影響并給出了倒相器快輸入響應與慢輸入響應的判據(jù) ,模型計算結果與SPICE BSIM1模型的模擬結果吻合得很好 。
A novel Schmitt-PPI circuit consisting of a Schmitt trigger and two push-pull inverter with an active resistor is presented.
該文提出了一種由施密特觸發(fā)器和帶有源負載推挽倒相器組成的新穎Schmitt PPI電路結構,可在CMOS脈沖電路中克服電源Gauss白噪聲對電路的影響,避免誤觸發(fā),得到較為穩(wěn)定的脈沖。